Integrated circuit and semiconductor device

ABSTRACT

An integrated circuit ( 100 ) in which a voltage divider circuit is integrated comprises a first resistor ( 121 ), second resistor ( 122 ), control portion ( 130 ), switch ( 140 ), and switching portion ( 150 ). The first resistor ( 121 ) and second resistor ( 122 ) form a resistive voltage divider element for dividing a voltage obtained by rectifying an alternating-current voltage, or a direct-current voltage, supplied to a control portion ( 130 ). The switch ( 140 ) is provided in series with the resistive voltage divider element, and passes or cuts off current passing through the resistive voltage divider element. The switching portion ( 150 ) switches the switch ( 140 ) so as to pass current during driving of the control portion ( 130 ), and cut off current during standby of the control portion ( 130 ).

TECHNICAL FIELD

This invention relates to an integrated circuit with an integratedresistance and to a semiconductor device.

BACKGROUND ART

In the prior art, in order to supply to an IC (Integrated Circuit) avoltage obtained by rectifying an alternating-current voltage or adirect-current voltage, a resistive voltage divider element has beenused to voltage-divide the voltage obtained by rectifying thealternating-current voltage supplied from a high-voltage line or thedirect-current voltage (see for example Patent References 1 to 3 below).Here, a high-voltage line is a line which supplies high voltages of 100V or higher.

FIG. 34 is a circuit diagram showing principal portions of a voltagedivider circuit of the prior art. The voltage divider circuit 2200 ofthe prior art comprises a resistor 2221 and resistor 2222. The output ofthe voltage divider circuit 2200 is input to the IC 2230. The resistor2221 is connected between a high-voltage line 2210 and an input terminalof the IC 2230. One end of the resistor 2222 is connected to theresistor 2221, and the other end of the resistor 2222 is grounded.

The resistor 2221 and resistor 2222 form a resistive voltage dividerelement which performs resistive dividing of a voltage obtained byrectifying an alternating-current voltage or of a direct-currentvoltage. The resistor 2221 and resistor 2222 lower the voltage obtainedby rectifying an alternating-current voltage or direct-current voltageto a low voltage which can be input to the IC 2230, and input thevoltage to the IC 2230. The input terminal of the IC 2230 is connectedto the intermediate node between the resistor 2221 and the resistor2222.

FIG. 35 is a circuit diagram showing a switching power supply of theprior art. The switching power supply of the prior art shown in FIG. 35is a power factor improvement circuit 1800. The power factor improvementcircuit 1800 performs full-wave rectification of the AC input of acommercial power supply at, for example, 100 to 240 V using a firstrectifier 1801 comprising a diode bridge, and uses this voltage tocharge a power supply capacitor 1802. Then, a switching transistor 1804is controlled by a power factor improvement control IC 1803, a step-upinductor 1805 passes current intermittently, and the intermittentcurrent is converted into a sine wave by a second rectifier 1806 and afirst capacitor 1807 and is output.

An IN terminal 1816 is provided in the power factor improvement controlIC 1803. The IN terminal 1816 is connected to the intermediate node of afirst resistive voltage divider circuit 1809, comprising two resistors1809 a and 1809 b and connected in parallel with the power supplycapacitor 1802. This is in order to use the first resistive voltagedivider circuit 1809 to resistively voltage-divide the voltage obtainedby using the first rectifier 1801 and power supply capacitor 1802 torectify the alternating-current voltage, and to input the result to theIN terminal 1816.

And, based on the signal input from the IN terminal 1816, the powerfactor improvement control IC 1803 outputs a pulse width control signalto the gate terminal of the switching transistor 1804.

A resistor 1810 is connected between the power factor improvementcontrol IC 1803 and the switching transistor 1804; by means of thisresistor 1810, the gate voltage of the switching transistor 1804 isadjusted. Further, a resistor 1811 lowers the voltage output from thefirst rectifier 1801 to a desired power supply voltage, and supplies theresult to the power factor improvement control IC 1803. In this way, theresistors 1809 a, 1809 b, 1810, 1811 are mounted externally to the powerfactor improvement control IC 1803.

Here, specific operation of the control portion 130 is explained. Whenthe voltage of a ZCD terminal 1813 falls, a set signals is input fromCOMP 1814 to RSFF 1815, and the switching transistor 1804 is turned on.The voltage-divided voltage of the IN terminal 1816 and VREF 1817 arecompared by the AMP 1818, and this signal and the triangle wave signalgenerated by RAMP 1819 are compared by COMP 1820; if the output signalfrom AMP 1818 is lower than the RAMP 1819 signal, a reset signal isinput to RSFF 1815 from COMP 1820, a low signal is output from OUT 1821,and the switching transistor 1804 is turned off. Further, if the voltageat the IS terminal 1822 exceeds VOCP 1823, a reset signal is input toRSFF 1815 from COMP 1824, a low signal is output from OUT 1821, and theswitching transistor 1804 is turned off.

FIG. 36 is a circuit diagram showing a modified example of a switchingpower supply of the prior art. In the power factor improvement circuit1800 shown in FIG. 36, the same symbols are assigned as in the similarconfiguration of the power factor improvement circuit 1800 shown in FIG.35, and explanations are omitted. Here, in addition to the firstresistive voltage divider circuit 1809, a second resistive voltagedivider circuit 1808 is provided on the outside of the power factorimprovement control IC 1803.

Specifically, a MUL terminal 1827 of the power factor improvementcontrol IC 1803 is connected to the intermediate node of the secondresistive voltage divider circuit 1808, comprising a resistor 1808 a anda resistor 1808 b. This is in order that the voltage resulting fromrectification of an alternating-current voltage by the first rectifier1801 and power supply capacitor 1802 can be resistively voltage-dividedby the second resistive voltage divider circuit 1808, the high voltagelowered to a low voltage that can be input to the power factorimprovement control IC 1803, and this voltage input to the MUL terminal1827.

FIG. 37 is a circuit diagram showing a modified example of principleportions of the voltage divider circuit of the prior art shown in FIG.34. In the voltage divider circuit 2200 shown in FIG. 34, a startupelement 2240 is comprised. The startup element 2240 is connected betweenthe high-voltage line 2210 and the input terminal of the startup circuit2250 (see for example Patent Reference 4 below).

-   Patent Reference 1: Japanese Patent Application Laid-open No.    H11-150234-   Patent Reference 2: Japanese Patent Application Laid-open No.    2005-94835-   Patent Reference 3: Japanese Patent Application Laid-open No.    2007-123926-   Patent Reference 4: Japanese Patent Application Laid-open No.    2008-153636

However, in the technology of the prior art of FIG. 34, the resistor2221 and resistor 2222 are connected in series between the high-voltageline 2210 and ground, so that even during standby of the IC 2230, directcurrent continues to flow from the high-voltage input portion of thehigh-voltage line 2210 to ground via the resistor 2221 and the resistor2222. Hence power is consumed by the voltage divider circuit 2200.

Similarly, in the technology of the prior art of FIG. 35, the resistor1809 a and the resistor 1809 b are connected in series, so that evenduring standby of the power factor improvement control IC 1803, directcurrent continues to flow via the resistor 1809 a and the resistor 1809b. Hence power is consumed by the first resistive voltage dividercircuit 1809. Further, because the first resistive voltage dividercircuit 1809 is mounted externally to the power factor improvementcontrol IC 1803, the number of externally mounted components increases,and the cost of the semiconductor device rises.

DISCLOSURE OF THE INVENTION

This invention resolves the above-described problems, and has as anobject the reduction of power consumption in a voltage divider circuitconnected to a high-voltage line which supplies a voltage obtained byrectifying an alternating-current voltage with a diode bridge andcapacitor or a direct-current voltage. A further object is to provide anintegrated circuit in which a voltage divider circuit is integrated intoa semiconductor device into which the output of a voltage dividercircuit is input.

In order to resolve the above problems and attain the above objects, inthe integrated circuit of the invention of Claim 1, a resistive voltagedivider element divides a voltage between ground and a high-voltage linewhich supplies a voltage obtained by rectifying an alternating-currentvoltage with a diode bridge and capacitor, a direct-current voltage, orsimilar. Here, a line voltage is a voltage of 100 V or higher. Further,a switch cuts off a current path formed between a power supply andground via a resistive voltage divider element. Switching means opensand closes a switch according to the state of the integrated circuitwhich is a supply destination of the voltage obtained by division by theresistive voltage divider element. Further, a voltage divider circuitcomprising a resistive voltage divider element, switch, and switchingmeans is characterized in being formed on the same semiconductorsubstrate as the integrated circuit which is the voltage supplydestination.

Further, the integrated circuit of the invention of Claim 2 is theintegrated circuit according to Claim 1, characterized in that theresistive voltage divider element has a resistance adjustment portionwhich adjusts a voltage division ratio of the resistive voltage dividerelement, and the switch is a MOSFET.

Further, the integrated circuit of the invention of Claim 3 is theintegrated circuit according to Claim 1, characterized in that theswitch is a MOSFET.

Further, the integrated circuit of the invention of Claim 4 is theintegrated circuit according to Claim 3, characterized in that at leastone resistor constituting the resistive voltage divider element isformed so as to be surrounded by the MOSFET, and one end of the resistoris connected to a drain terminal of the MOSFET.

Further, the integrated circuit of the invention of Claim 5 is theintegrated circuit according to Claim 3, characterized in that theresistive voltage divider element of the portion in which the resistanceadjustment portion is formed is connected to a source terminal of theMOSFET.

Further, the integrated circuit of the invention of Claim 6 is theintegrated circuit according to Claim 3, characterized in that a portionor the entirety of the resistive voltage divider element, the MOSFET,and a JFET are integrated on the same semiconductor substrate.

Further, the integrated circuit of the invention of Claim 7 is theintegrated circuit according to Claim 6, characterized in that a drainterminal of the JFET and a high-potential side of the resistive voltagedivider element connected to a drain terminal of the MOSFET areconnected to an external connection terminal connected to thehigh-voltage line.

Further, the integrated circuit of the invention of Claim 8 is theintegrated circuit according to Claim 7, characterized in that the drainterminal of the JFET and the high-potential side of the resistivevoltage divider element connected to the drain terminal of the MOSFETare connected to the same external connection terminal.

Further, the integrated circuit of the invention of Claim 9 is theintegrated circuit according to Claim 6, characterized in that ahigh-potential side of the resistive voltage divider element connectedto a drain terminal of the JFET and a drain terminal of the MOSFET isconnected to an external connection terminal connected to thehigh-voltage line.

Further, the integrated circuit of the invention of Claim 10 is theintegrated circuit according to any one of Claims 1 to 9, characterizedin that it is a control IC of a switching power supply.

Further, in the semiconductor device of the invention of Claim 11, afirst semiconductor layer of a second conduction type is formed on asurface layer of a semiconductor substrate of a first conduction type. Afirst insulating film covers the first semiconductor layer. Further, ahigh-voltage high-resistance element is buried in the first insulatingfilm. Further, a first electrode is electrically connected to the firstsemiconductor layer and one end of the high-voltage high-resistanceelement. Further, a second semiconductor layer is formed on the surfacelayer of the semiconductor substrate, removed from the firstsemiconductor layer. Further, a second electrode is electricallyconnected to the second semiconductor layer and the other end of thehigh-voltage high-resistance element. Further, a third diffusion layeris formed on the surface layer of the semiconductor substrate in contactwith the second semiconductor layer. Further, a fourth diffusion layeris formed on the surface layer of the third diffusion layer, removedfrom the second semiconductor layer. Further, an oxide film is formed ona region of the third diffusion layer between the second semiconductorlayer and the fourth diffusion layer. Further, a third electrode isformed on the oxide film. Further, a fourth electrode is electricallyconnected to the fourth diffusion layer.

Further, the semiconductor device of the invention of Claim 12 is thesemiconductor device according to Claim 11, in which a first oxide filmis formed on the first semiconductor layer. Further, a first insulatingfilm covers the first semiconductor layer and the first oxide film.Further, the high-voltage high-resistance element is characterized inbeing buried in the first insulating film in the region of the firstoxide film of the first insulating film.

Further, the semiconductor device of the invention of Claim 13 is thesemiconductor device according to Claim 11, in which a second oxide filmis formed on the second semiconductor layer. Further, a secondinsulating film covers the second semiconductor layer and the secondoxide film. Further, the third electrode is characterized in beingformed from above the oxide film to above the second oxide film.

Further, the semiconductor device of the invention of Claim 14 is thesemiconductor device according to Claim 11, in which a firsthigh-voltage application layer is formed on the surface layer of thesemiconductor substrate in contact with the first semiconductor layer.Further, a fifth diffusion layer is formed on a surface layer of thefirst high-voltage application layer, removed from the firstsemiconductor layer, and is characterized in being connected to thefirst electrode.

Further, the semiconductor device of the invention of Claim 15 is thesemiconductor device according to Claim 11, in which a secondhigh-voltage application layer is formed on the surface layer of thesemiconductor substrate in contact with the second semiconductor layer.Further, a sixth diffusion layer is formed on the surface layer of thesecond high-voltage application layer, removed from the secondsemiconductor layer, and is characterized in being connected to thesecond electrode.

Further, the semiconductor device of the invention of Claim 16 is thesemiconductor device according to Claim 11, further comprising a JFET,having a portion of the second semiconductor layer, a portion of theoxide film, a portion of the second high-voltage application layer, afifth electrode electrically connected to the second semiconductorlayer, and the second electrode electrically connected to the secondhigh-voltage application layer.

Further, the semiconductor device of the invention of Claim 17 is thesemiconductor device according to Claim 11, in which a thirdhigh-voltage application layer is formed on a surface layer of the thirddiffusion layer, removed from the second semiconductor layer. Further,the fourth diffusion layer is characterized in being formed on a surfacelayer of the third high-voltage application layer, removed from thesecond semiconductor layer.

Further, the semiconductor device of the invention of Claim 18 is thesemiconductor device according to Claim 11, characterized in that thehigh-voltage high-resistance element is formed such that the planarshape thereof is a spiral shape.

Further, the semiconductor device of the invention of Claim 19 is thesemiconductor device according to Claim 11, characterized in that thehigh-voltage high-resistance element is provided in plurality and inparallel.

Further, the semiconductor device of the invention of Claim 20 is thesemiconductor device according to Claim 11, characterized in that thefirst semiconductor layer is a first diffusion layer formed withimpurities added, and the second semiconductor layer is a seconddiffusion layer formed with impurities added.

Further, the semiconductor device of the invention of Claim 21 is thesemiconductor device according to Claim 11, characterized in that thefirst semiconductor layer is a first epitaxial layer formed by epitaxialgrowth, and that the second semiconductor layer is a second epitaxiallayer formed by epitaxial growth.

Further, the semiconductor device of the invention of Claim 22 is thesemiconductor device according to Claim 21, characterized in that thefirst epitaxial layer and the second epitaxial layer are separated by aseventh diffusion layer of the first conduction type, formed on thesurface layer of the semiconductor substrate.

Further, the semiconductor device of the invention of Claim 23 is thesemiconductor device according to any one of Claims 16 to 22,characterized in that the second electrode forming the portion of theJFET and the first electrode are connected to the same terminal by awire.

According to this invention, by providing a switch in series with aresistive voltage divider element, the current passing through theresistive voltage divider element can be cut off during standby of theintegrated circuit. Hence the continuing flow of current through theresistive voltage divider element during standby of the integratedcircuit can be prevented, and power consumption of the current can bereduced. Further, a voltage divider circuit can be integrated into asemiconductor device into which the output of the voltage dividercircuit is input. By this means, the number of components mountedexternally to a semiconductor device can be reduced, so that the costsof the semiconductor device and of a power supply system using thesemiconductor device can be reduced. Further, by providing a resistanceadjustment portion in the resistive voltage divider element, the overallresistance value of the resistive voltage divider element can beadjusted. By this means, the divided voltage of a voltage obtained byrectifying an alternating-current voltage, or of a direct-currentvoltage, can be detected with good precision. Further, by providing astartup element which supplies current to the resistive voltage dividerelement, power consumption of the circuit can be further reduced.

As explained above, by means of a semiconductor device of thisinvention, there is the advantageous result that a voltage dividercircuit is connected to a voltage obtained by rectifying analternating-current voltage or to a direct-current voltage, and that thepower consumption of this voltage divider circuit can be reduced.Further, there is the advantageous result that a semiconductor device inwhich a voltage divider circuit is integrated with the semiconductordevice to which the output of the voltage divider circuit is input canbe provided. Further, there is the advantageous result that the costssuch a semiconductor device and of a system using such a device can bereduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing principle portions of the integratedcircuit of Embodiment 1 of the invention;

FIG. 2 is a plane view showing principle portions of the semiconductordevice of Embodiment 1 of the invention;

FIG. 3 is a cross-sectional view sectioning the semiconductor deviceshown in FIG. 2 along the section line X-X′;

FIG. 4 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3;

FIG. 5 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 4;

FIG. 6 is a cross-sectional view showing operation (when the MOSFET 220is turned on) of the semiconductor device shown in FIG. 5;

FIG. 7 is a cross-sectional view showing operation (when the MOSFET 220is turned off) of the semiconductor device shown in FIG. 5;

FIG. 8 is a plane view showing principle portions of the semiconductordevice of Embodiment 2 of the invention;

FIG. 9 is a cross-sectional view sectioning the semiconductor deviceshown in FIG. 8 along the section line X-X′;

FIG. 10 is a plane view showing a modified example of the semiconductordevice shown in FIG. 8;

FIG. 11 is a plane view showing a modified example of the semiconductordevice shown in FIG. 10;

FIG. 12 is a plane view showing a modified example of the semiconductordevice shown in FIG. 10;

FIG. 13 is a circuit diagram showing principle portions of theintegrated circuit of Embodiment 3 of the invention;

FIG. 14 is a plane view showing principle portions of the semiconductordevice of Embodiment 3 of the invention;

FIG. 15 is a plane view showing principle portions of the semiconductordevice of Embodiment 4 of the invention;

FIG. 16 is a cross-sectional view sectioning the semiconductor deviceshown in FIG. 15 along the section line X-X′;

FIG. 17 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3;

FIG. 18 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3;

FIG. 19 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3;

FIG. 20 is a circuit diagram showing the switching power supply ofEmbodiment 8 of the invention;

FIG. 21 is a circuit diagram showing Modified Example 1 of the switchingpower supply of Embodiment 8 of the invention;

FIG. 22 is a circuit diagram showing Modified Example 2 of the switchingpower supply of Embodiment 8 of the invention;

FIG. 23 is a circuit diagram showing the configuration of the switchingpower supply device of Embodiment 9 of the invention;

FIG. 24 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 1;

FIG. 25 is a plane view showing principle portions of a trimmingresistor formed on a semiconductor substrate;

FIG. 26 is a cross-sectional view sectioning the trimming resistor shownin FIG. 25 along the section line Z-Z′;

FIG. 27 is a circuit diagram showing the trimming resistor shown in FIG.25;

FIG. 28 is a circuit diagram showing a switching power supply device,comprising a startup element separate from the switching power supplydevice shown in FIG. 23;

FIG. 29 is a plane view showing principle portions of the semiconductordevice of Embodiment 11 of the invention;

FIG. 30 is a circuit diagram showing a modified example of thesemiconductor device shown in FIG. 1;

FIG. 31 is a plane view showing principle portions of the semiconductordevice of Embodiment 12 of the invention;

FIG. 32 is a cross-sectional view sectioning the semiconductor deviceshown in FIG. 31 along the section line A-O;

FIG. 33 is a cross-sectional view sectioning the semiconductor deviceshown in FIG. 31 along the section line C-C′;

FIG. 34 is a circuit diagram showing principle portions of a voltagedivider circuit of the prior art;

FIG. 35 is a circuit diagram showing a switching power supply of theprior art;

FIG. 36 is a circuit diagram showing a modified example of a switchingpower supply of the prior art; and

FIG. 37 is a circuit diagram showing a modified example of principleportions of the voltage divider circuit of the prior art shown in FIG.34.

EXPLANATION OF REFERENCE NUMERALS

-   -   1 AC input terminal    -   3 Power supply capacitor    -   9 Rectifying diode    -   10, 18 Smoothing capacitor    -   12 DC output terminal    -   13 Photodiode    -   14 Shunt regulator    -   17 Rectifying diode    -   19, 220 MOSFET    -   22 Phototransistor    -   31 Control IC    -   100 Integrated circuit    -   110 High-voltage line    -   130 Control portion    -   140, 1809 c Switch    -   150 Switching portion    -   200 Semiconductor device    -   210 Resistance portion    -   211 P-type semiconductor substrate    -   212 N-type drift layer    -   214 First oxide film    -   215 First insulating film    -   216, 1501 High-voltage high-resistance element    -   217 First metal wiring line    -   217 a First drain contact portion    -   217 b, 218 a High-voltage high-resistance contact portion    -   218, 218A, 218B Second metal wiring line    -   218 b Second drain contact portion    -   221 N-type drain drift layer    -   223 P base layer    -   225 Second oxide film    -   226 Gate oxide film    -   227, 227A, 227B Gate electrode    -   227 a, 229 a Terminal    -   228 Second insulating film    -   229, 229A, 229B Third metal wiring line    -   229 b Source contact portion    -   217 b Contact portion    -   401 First high-voltage application layer    -   402 Second high-voltage application layer    -   501 Third high-voltage application layer    -   1421 Third resistor    -   1422 Fourth resistor    -   1430 Control portion    -   1440 Second switch    -   1450 Second switching portion    -   1601 Fourth metal wiring line    -   1601 a Third drain contact portion    -   1602 First wire    -   1800 Power factor improvement circuit    -   1801 First rectifier    -   1802 Power supply capacitor    -   1803 Power factor improvement control IC    -   1804 Switching transistor    -   1806 Second rectifier    -   1808 Second resistive voltage divider circuit    -   1809 First resistive voltage divider circuit

BEST MODE FOR CARRYING OUT THE INVENTION

Below, preferred embodiments of integrated circuits and semiconductordevices of this invention are explained in detail, referring to theattached drawings.

Embodiment 1

FIG. 1 is a circuit diagram showing principle portions of the integratedcircuit of Embodiment 1 of the invention. As shown in FIG. 1, theintegrated circuit 100 of Embodiment 1 comprises a first resistor 121,second resistor 122, control portion 130, switch 140, and switchingportion 150. All of these elements are formed on the same semiconductorsubstrate. A voltage obtained by rectifying an alternating-currentvoltage, or a direct-current voltage, is input to the integrated circuit100 from a high-voltage line 110.

One end of the first resistor 121 is connected to the high-voltage line110, and the other end of the first resistor 121 is connected to one endof the switch 140. One end of the second resistor 122 is connected tothe other end of the switch 140, and the other end of the secondresistor 122 is grounded. The first resistor 121 and second resistor 122form a resistive voltage divider element, which resistively divides avoltage obtained by rectifying an alternating-current voltage, or adirect-current voltage, input from the high-voltage line 110.

The first resistor 121 and second resistor 122 lower the voltageobtained by rectifying an alternating-current voltage, or thedirect-current voltage, to a low voltage which can be input to thecontrol portion 130, and input the voltage to the control portion 130.The control portion 130 outputs a control signal based on the inputvoltage. The input terminal of the control portion 130 is connected tothe intermediate node of the switch 140 and second resistor 122.

The switch 140 is connected in series between the first resistor 121 andthe second resistor 122. The voltage obtained by rectifying analternating-current voltage or the direct-current voltage is supplied tothe control portion 130 when the switch 140 is in the closed state, andsupply of the voltage obtained by rectifying an alternating-currentvoltage or the direct-current voltage to the control portion 130 is cutoff when the switch 140 is in the open state. The switch 140 comprisesfor example a MOSFET (Metal Oxide Semiconductor Field EffectTransistor).

The drain terminal of the MOSFET forming the switch 140 is connected tothe first resistor 121, and the source terminal is connected to thesecond resistor 122. This MOSFET is configured as a semiconductor device200 configured integrally with the first resistor 121 (see FIG. 2 andFIG. 3).

The switching portion 150 opens and closes the switch 140 according tothe state of the current (control portion 130) which is the supplydestination for the voltage obtained by rectifying analternating-current voltage or the direct-current voltage. The switchingportion 150 performs switching such that the switch 140 is in the closedstate, that is, the MOSFET is in the on state, during driving of thecontrol portion 130, and such that the switch 140 is in the open state,that is, the MOSFET is in the off state, during standby of the controlportion 130. For example, the switching portion 150 acquires drivingsignals and standby signals output to the control portion 130.

A driving signal is a signal to drive the control portion 130 duringstandby. A standby signal is a signal to cause standby of the controlportion 130 during driving. Hence when the switching portion 150acquires a driving signal, the switch 140 switches to the closed state,and the voltage obtained by rectifying an alternating-current voltage orthe direct-current voltage, which is voltage-divided by the firstresistor 121 and the second resistor 122, is applied to the controlportion 130. On the other hand, when the switching portion 150 acquiresa standby signal, the switch 140 switches to the open state, and thesupply of the voltage obtained by rectifying an alternating-currentvoltage or the direct-current voltage to the control portion 130 is cutoff.

When the switch 140 is in the open state, the current path between thehigh-voltage line 110 and ground, comprising the first resistor 121,switch 140, and second resistor 122, is cut off, so that the flow ofcurrent from the high-voltage line 110 to ground can be prevented.Driving signals and standby signals are for example output from acircuit in a stage after the control portion 130.

In such an integrated circuit 100, the first resister 121 on thehigh-potential side of the resistive voltage divider element is providedon the drain side of the MOSFET configuring the switch 140, and moreoverthe resistance value of the first resistor 121 is made somewhat lowerthan the combined resistance value of the first resistor 121 and thesecond resistor 122, so that the resistance value of the source side ofthe MOSFET can be made small. By this means, when the MOSFET enters theon state, a high potential on the source side of the MOSFET isprevented. Further, by for example making the second resistor 122connected to the source side of the MOSFET a resistor formed so that theresistance value can be adjusted (hereafter called a “trimmingresistor”) by for example cutting and separating a portion of the secondresistor 122, the resistance value of the second resistor 122 can beadjusted. By this means, the overall resistance value and the voltagedivision ratio of the resistive voltage divider element can be adjusted,so that the output voltage of the resistive voltage divider element(voltage-divided voltage) can be adjusted with good precision.

FIG. 2 is a plane view showing principle portions of the semiconductordevice of Embodiment 1 of the invention. FIG. 3 is a cross-sectionalview sectioning the semiconductor device shown in FIG. 2 along thesection line X-X′. In the plane views of FIG. 2 and subsequent drawings,in order to clearly display characteristics of the semiconductor device200, interlayer insulating films (a first insulating film 215 and asecond insulating film 228) are omitted. The semiconductor device 200 isa high-voltage, high-resistance integral-type MOSFET made an integraltype with the first resistor 121 and the switch 140 (see FIG. 1).Although not shown, the switching portion 150, control portion 130, andsecond resistor 122 are also formed on the same semiconductor substrate.

The semiconductor device 200 comprises an integrally configuredresistance portion 210 and a MOSFET 220. The resistance portion 210 isequivalent to the first resistor 121. The MOSFET 220 is equivalent tothe switch 140. The resistance portion 210 comprises a P-typesemiconductor substrate 211, N-type drift layer 212, first drain N⁺layer 213, first oxide film 214, first insulating film 215, high-voltagehigh-resistance element 216, first metal wiring line 217, and secondmetal wiring line 218.

The P-type semiconductor substrate 211 is a substrate formed by addingP-type (first conduction type) impurities into a semiconductor. TheN-type drift layer 212 (first diffusion layer) is a diffusion layerformed by adding N-type (second conduction type) impurities into asemiconductor. The N-type drift layer 212 forms a portion of the surfacelayer of the P-type semiconductor substrate 211.

The N-type drift layer 212 is formed such that the planar shape thereofon the P-type semiconductor substrate 211 is for example a circularshape. The ion injection concentration in the N-type drift layer 212 isfor example approximately 1.0×10¹² to 1.5×10¹²/cm². The first drain N⁺layer 213 (fifth diffusion layer) forms a portion of the surface layerof the N-type drift layer 212.

The first oxide film 214 is formed on a region of the N-type drift layer212 in which the first drain N⁺ layer 213 is not formed. The first oxidefilm 214 is formed such that the planar shape thereof is for example acircular ring shape surrounding the first drain N⁺ layer 213. Thethickness of the first oxide film 214 is for example approximately 4000to 8000 Å. The first insulating film 215 is formed so as to cover theN-type drift layer 212 and the first oxide film 214.

The high-voltage high-resistance element 216 is buried in a region ofthe first insulating film 215 on the first oxide film 214. Thehigh-voltage high-resistance element 216 is formed such that the planarshape thereof is for example a spiral shape. Or, the high-voltagehigh-resistance element 216 is formed by means of two end portionsforming ring shapes on the inside and on the outside, and a spiralportion forming a spiral shape and connected to the two end portions.

At the inside ring-shape end portion, a plurality of contact portions217 b with the first metal wiring line 217 are formed. The high-voltagehigh-resistance element 216 is formed by means of polysilicon or anotherthin film resistor. As the ion injection concentration of thehigh-voltage high-resistance element 216, for example approximately1.0×10¹⁴ to 1.0×10¹⁶/cm² is appropriate. By using an ion injectionconcentration on the order of 10¹⁵/cm², a high-voltage high-resistanceelement 216 with almost no temperature dependence and with excellenttemperature characteristics can be formed. The ion injectionconcentration of the high-voltage high-resistance element 216 may forexample be approximately from 2.5×10¹⁵ to 3.5×10¹⁵/cm².

The first metal wiring line 217 (first electrode) is formed on the firstinsulating film 215. The first metal wiring line 217 is connected to thehigh-voltage line 110 (see FIG. 1). Further, the first metal wiring line217 has a first drain contact portion 217 a which penetrates the firstinsulating film 215, and a high-voltage high-resistance contact portion217 b.

The first drain contact portion 217 a is connected to the first drain N⁺layer 213. The voltage obtained by rectifying an alternating-currentvoltage or the direct-current voltage is applied to the first drain N⁺layer 213 via the first metal wiring line 217. The high-voltagehigh-resistance contact portion 217 b is connected to an end portion(one end) on the inside of the high-voltage high-resistance element 216.

The first metal wiring line 217 has a planar shape formed in for examplea circular shape. When the inside end portion of the high-voltagehigh-resistance element 216 is formed in a circular ring shape, theplanar shape of the high-voltage high-resistance contact portion 217 bmay be formed into a circular ring shape, or may be formed into aplurality of separated ring shapes.

The second metal wiring line 218 (second electrode) is formed on thefirst insulating film 215. Further, the second metal wiring line 218 hasa high-voltage high-resistance contact portion 218 a penetrating thefirst insulating film 215 and a second drain contact portion 218 b. Thehigh-voltage high-resistance contact portion 218 a is connected to theoutside end portion (other end) of the high-voltage high-resistanceelement 216.

The second metal wiring line 218 is formed such that the planar shapethereof is for example a circular ring shape surrounding the first metalwiring line 217. When the inside end portion of the high-voltagehigh-resistance element 216 is formed in a ring shape, the planar shapeof the high-voltage high-resistance contact portion 217 b may be formedin a ring shape, or may be formed into a plurality of separated ringshapes.

The MOSFET 220 comprises a P-type semiconductor substrate 211 which iscommon with the resistance portion 210, an N-type drain drift layer 221,second drain N⁺ layer 222, second metal wiring line 218 common with theresistance portion 210, P base layer 223, source N⁺ layer 224, secondoxide film 225, gate oxide film 226, gate electrode 227, secondinsulating film 228, and third metal wiring line 229.

The N-type drain drift layer 221 (second diffusion layer) is formed on aportion of the surface layer of the P-type semiconductor substrate 211.The N-type drain drift layer 221 is formed removed from the N-type driftlayer 212. The N-type drain drift layer 221 is formed such that theplanar shape thereof is for example a circular ring shape surroundingthe N-type drift layer 212. The ion injection concentration of theN-type drain drift layer 221 is for example approximately 1.0×10¹² to1.5×10¹²/cm². This ion injection can also be utilized as ion injectionwhen forming the N-type drift layer 212, and so the N-type drain driftlayer 221 and the N-type drift layer 212 can be formed simultaneously,and through simultaneous formation, the number of manufacturingprocesses can be reduced.

The second drain N⁺ layer 222 (sixth diffusion layer) is formed on aportion of the surface layer of the N-type drain drift layer 221. Thesecond drain N⁺ layer 222 is formed such that the planar shape thereofis for example a circular ring shape surrounding the first oxide film214. The second drain contact portion 218 b of the second metal wiringline 218 is connected to the second drain N⁺ layer 222. The second draincontact portion 218 b may be formed in a circular ring shape, or may beformed into a plurality of separated ring shapes.

The P base 223 (third diffusion layer) is formed on a portion of thesurface layer of the P-type semiconductor substrate 211. The P baselayer 223 is formed in contact with the N-type drain drift layer 221,and removed from the N-type drift layer 212. The P base layer 223 isformed such that the planar shape thereof is for example a circular ringshape surrounding the N-type drain drift layer 221. The P base layer 223becomes a channel region in which a channel is formed. The ion injectionconcentration of the P base layer 223 is for example approximately1.5×10¹³ to 2.5×10¹³/cm².

The source N⁺ layer 224 (fourth diffusion layer) is formed on a portionof the surface layer of the P base layer 223. The source N⁺ layer 224 isformed removed from the N-type drain drift layer 221. The source N⁺layer 224 is formed such that the planar shape thereof is for example acircular ring shape surrounding the channel region of the P base layer223.

The second oxide film 225 is formed on a region of the N-type draindrift layer 221 in which the second drain N⁺ layer 222 is not formed.The second oxide film 225 is formed such that the plane shape is forexample a circular ring shape surrounding the second drain N⁺ layer 222.The thickness of the second oxide film 225 is for example approximately4000 to 8000 Å. The gate oxide film 226 is formed spanning above aregion in the P base layer 223 between the source N⁺ layer 224 and theN-type drain drift layer 221, and above a region in the N-type draindrift layer 221 where the second oxide film 225 is not formed.

The gate electrode 227 (third electrode) is formed on the gate oxidefilm 226. The gate electrode 227 has a terminal 227 a connected to theswitching portion 150 (see FIG. 1). Also, the gate electrode 227 isformed from the gate oxide film 226 to above a portion of the secondoxide film 225. The second insulating film 228 is formed so as to coverthe surfaces of the N-type drain drift layer 221, P base layer 223,second oxide film 225, and gate electrode 227.

The third metal wiring line 229 (fourth electrode) is formed on thesecond insulating film 228. The third metal wiring line 229 has aterminal 229 a connected to the control portion 130 (see FIG. 1).Further, the third metal wiring line 229 has a source contact portion229 b penetrating the second insulating film 228. The source contactportion 229 b is connected to the source N⁺ layer 224.

The third metal wiring line 229 is formed such that the planar shapethereof is for example a circular ring shape surrounding the secondmetal wiring line 218. The source contact portion 229 b may be formed ina circular ring shape, or may be formed into a plurality of separatedring shapes.

Further, as stated above, the second resistor 122 is formed in adifferent place on the P-type semiconductor substrate 211 from thesemiconductor device 200. Because a low voltage of approximately 5 V isapplied, the second resistor 122 can be configured as a well-knownpolysilicon resistor formed with an oxide film intervening on asemiconductor substrate. Further, an insulating film such as the firstinsulating film 215 is filmed thereupon, and two holes are provided inthe first insulating film 215 reaching the polysilicon resistor. Each ofthese holes is buried to form two wiring lines formed on the firstinsulating film 215.

FIG. 4 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3. In FIG. 4, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 3, and explanations are omitted. In the semiconductor device 200shown in FIG. 3, at least one among the first high-voltage applicationlayer 401 and the second high-voltage application layer 402 may beprovided.

The first high-voltage application layer 401 is an N-type diffusionlayer formed on the surface layer of the P-type semiconductor substrate211 in contact with the N-type drift layer 212. The first high-voltageapplication layer 401 is formed such that, on the surface layer of theP-type semiconductor substrate 211, the planar shape thereof is forexample a circular shape. The first drain N⁺ layer 213 is formed on thesurface layer of the first high-voltage application layer 401, removedfrom the N-type drift layer 212. By means of the first high-voltageapplication layer 401, the first drain N⁺ layer 213 is electricallyconnected to the N-type drift layer 212 while being separated from theN-type drift layer 212, and can enable withstanding of high voltages bythe high-voltage high-resistance element 216.

The second high-voltage application layer 402 is an N-type diffusionlayer formed on the surface layer of the P-type semiconductor substrate211 in contact with the N-type drain drift layer 221. The secondhigh-voltage application layer 402 is formed such that, on the surfacelayer of the P-type semiconductor substrate 211, the planar shapethereof is for example a circular ring shape surrounding the N-typedrift layer 212. The second drain N⁺ layer 222 is formed on the surfacelayer of the second high-voltage application layer 402, removed from theN-type drain drift layer 221.

By means of the second high-voltage application layer 402, the seconddrain N⁺ layer 222 is electrically connected to the N-type drain driftlayer 221 while being separated from the N-type drain drift layer 221.Further, the second high-voltage application layer 402 is formed removedfrom the N-type drift layer 212. By this means, the off withstandvoltage of the MOSFET 220 can withstand high voltages. The ion injectionconcentrations of the first high-voltage application layer 401 and thesecond high-voltage application layer 402 are for example approximately2.5×10¹² to 3.5×10¹²/cm².

FIG. 5 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 4. In FIG. 5, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 4, and explanations are omitted. In the semiconductor device 200shown in FIG. 4, a third high-voltage application layer 501 may befurther provided. Here, the thickness of the gate oxide film 226 isincreased.

The third high-voltage application layer 501 is an N-type diffusionlayer formed on the surface layer of the P base layer 223, removed fromthe N-type drain drift layer 221. The source N⁺ layer 224 is formed onthe surface layer of the third high-voltage application layer 501,removed from the P base layer 223. The third high-voltage applicationlayer 501 is formed such that, on the surface layer of the P-typesemiconductor substrate 211, the planar shape thereof is for example acircular ring shape surrounding the N-type drain drift layer 221.

The ion injection concentration of the third high-voltage applicationlayer 501 is for example approximately 8.0×10¹³ to 1.2×10¹⁴/cm². By thismeans, the source N⁺ layer 224 can be made to withstand high voltages.Further, while securing the formation of a channel in the P base layer223, the thickness of the gate oxide film 226 can be increased. Hencethe gate oxide film 226 can be made to withstand high voltages.

FIG. 6 is a cross-sectional view showing operation (when the MOSFET 220is turned on) of the semiconductor device shown in FIG. 5. When theswitching portion 150 (see FIG. 1) applies a voltage equal to or above athreshold value voltage to the gate electrode 227 (when the MOSFET 220is turned on), a channel is formed near the surface of the P base layer223, and there is conduction between the N-type drain drift layer 221and the source N⁺ layer 224. In this case, the high-voltagehigh-resistance element 216, N-type drain drift layer 221, and channelof the P base layer 223 act as a resistance.

Because the resistance of the high-voltage high-resistance element 216is higher than the resistance of the N-type drain drift layer 221, apotential distribution of for example 5 to 500 V is formed on the sideof the high-voltage high-resistance element 216, as shown in FIG. 6. Bythis means, a high withstand voltage is realized in the side of thehigh-voltage high-resistance element 216.

A high voltage (500 V) is applied to the first drain N⁺ layer 213, and apotential (approximately 5 V) lowered by the high-voltagehigh-resistance element 216 is applied to the second drain N⁺ layer 222.Hence there is little widening of the depletion layer, which widens fromthe PN junction of the second high-voltage application layer 402 and theP-type semiconductor substrate toward the P-type semiconductorsubstrate.

Also, the widening of the depletion layer which widens from the PNjunction of the second high-voltage application layer 402 and the P-typesemiconductor substrate toward the P-type semiconductor substrate issmall compared with that of the depletion layer which widens from the PNjunction of the N-type drift layer 212 and the P-type semiconductorsubstrate toward the P-type semiconductor substrate. Hence these twodepletion layers are not joined together. Consequently conduction of theN-type drift layer 212 and second high-voltage application layer 402, inparallel with the high-voltage high-resistance element 216 and secondmetal wiring line 218, is prevented, and a high withstand voltage can berealized.

FIG. 7 is a cross-sectional view showing operation (when the MOSFET 220is turned off) of the semiconductor device shown in FIG. 5. When theswitching portion 150 (see FIG. 1) does not apply a voltage at or abovea threshold value voltage to the gate electrode 227, a channel is notformed in the P base 223, and there is no conduction between the N-typedrain drift layer 221 and the source N⁺ layer 224. In this case, asshown in FIG. 7, a high potential results from the high-voltagehigh-resistance element 216 to the second high-voltage application layer402. Consequently, achievement of a high withstand voltage on the sideof the MOSFET 220 is necessary.

This is a case in which a high voltage (500 V) at the same potential isapplied to the N-type drift layer 212 and to the second high-voltageapplication layer 402, so that as opposed to when the MOSFET 220 isturned on, there is large widening of the depletion layer which widensfrom the PN junction of the second high-voltage application layer 402and the P-type semiconductor substrate toward the P-type semiconductorsubstrate.

Hence the depletion layer which widens from the PN junction of thesecond high-voltage application layer 402 and the P-type semiconductorsubstrate toward the P-type semiconductor substrate, and the depletionlayer which widens from the PN junction of the N-type drift layer 212and the P-type semiconductor substrate toward the P-type semiconductorsubstrate, are joined together. At this time, a potential differenceoccurs in the first oxide film 214, and breakdown of the firstinsulating film 215 can be prevented.

As above, by setting the spacing between the N-type drift layer 212 andthe second high-voltage application layer 402 such that, when the MOSFET220 is turned on, the depletion layer which widens from the PN junctionof the second high-voltage application layer 402 and the P-typesemiconductor substrate toward the P-type semiconductor substrate, andthe depletion layer which widens from the PN junction of the N-typedrift layer 212 and the P-type semiconductor substrate toward the P-typesemiconductor substrate, are not joined together, and when the MOSFET220 is turned off, the depletion layer which widens from the PN junctionof the second high-voltage application layer 402 and the P-typesemiconductor substrate toward the P-type semiconductor substrate, andthe depletion layer which widens from the PN junction of the N-typedrift layer 212 and the P-type semiconductor substrate toward the P-typesemiconductor substrate, are joined together, a high withstand voltagecan be achieved in both states, when the MOSFET 220 is turned on and isturned off.

In this way, by means of the integrated circuit 100 of Embodiment 1, aswitch 140 is provided in series with a resistive voltage dividerelement configured by a first resistor 121 and a second resistor 122,and by putting this switch 140 into the open state during standby of thecontrol portion 130, current passing through the resistive voltagedivider element can be cut off. Hence the continuing flow of currentthrough the resistive voltage divider element during standby of thecontrol portion 130 can be prevented, and circuit power consumption canbe reduced. Further, by cutting off the current passing through theresistive voltage divider element, the withstand voltage applied to theresistive voltage divider element can be reduced. Hence the size of theresistive voltage divider element can be decreased, and the element areanecessary for the resistive voltage divider element can be decreased.

Further, by configuration as a semiconductor device 200 configuredintegrally with a first resistor 121 and switch 140 configuring aresistive voltage divider element, the first resistor 121 and switch 140can be integrated with the integrated circuit 100, without providing newconstituent components such as mechanical switches and similar.

Further, in the semiconductor device 200, by integrally configuring theresistance portion 210 and MOSFET 220 in common with the second metalwiring line 218, there is no need to provide drain metal wiring line orsimilar spanning the N-type drain drift layer 221 for connection of theresistance portion 210 and MOSFET 220. Hence the circuit withstandvoltage can be maintained without providing a field plate or other newconstituent components.

Further, by forming the film thickness of the first oxide film 214 to bethick as described above, due to the potential difference occurringbetween the metal wiring line and high-voltage high-resistance element216 formed on the first oxide film 214, and the semiconductor portion,breakdown of the first oxide film 214 can be prevented. Advantageousresults obtained by forming the film thickness of the second oxide film225 to be thick as described above are also similar to those for thefirst oxide film 214.

Embodiment 2

FIG. 8 is a plane view showing principle portions of the semiconductordevice of Embodiment 2 of the invention. Further, FIG. 9 is across-sectional view sectioning the semiconductor device shown in FIG. 8along the section line X-X′. In FIG. 8 and FIG. 9, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 2 and FIG. 3, and explanations are omitted. As shown in FIG. 8 andFIG. 9, in the semiconductor device 200 of Embodiment 2, thehigh-voltage high-resistance element 216 is formed such that the planarshape thereof is for example a circular ring shape.

FIG. 10 is a plane view showing a modified example of the semiconductordevice shown in FIG. 8. In FIG. 10, the same symbols are assigned forthe configuration similar to the configuration shown in FIG. 8, andexplanations are omitted. In FIG. 8, all configurations, excepting theP-type semiconductor substrate 211 of the semiconductor device 200, areformed in a planar shape which is either circular or a circular ringshape; but as shown in FIG. 10, the planar shapes of all configurationsof the semiconductor device 200 may be formed in a track (ellipse)shape. The cross-sectional view shown in FIG. 10 which sections thesemiconductor device 200 along the section line X-X′ is similar to thecross-sectional view shown in FIG. 9.

FIG. 11 is a plane view showing a modified example of the semiconductordevice shown in FIG. 10. In FIG. 11, the same symbols are assigned forthe configuration similar to the configuration shown in FIG. 10, andexplanations are omitted. In FIG. 10, the high-voltage high-resistanceelement 216 is formed such that the planar shape thereof is a trackshape, but as shown in FIG. 11, the high-voltage high-resistance element216 may be formed such that the planar shape thereof is a track shape,and is moreover a spiral shape. A cross-sectional view of thesemiconductor device 200 shown in FIG. 11 sectioned along the sectionline X-X′ is similar to the cross-sectional view shown in FIG. 3.

FIG. 12 is a plane view showing a modified example of the semiconductordevice shown in FIG. 10. In FIG. 12, the same symbols are assigned forthe configuration similar to the configuration shown in FIG. 10, andexplanations are omitted. In FIG. 10, the high-voltage high-resistanceelement 216 is formed such that the planar shape thereof is a trackshape, but as shown in FIG. 12, the high-voltage high-resistance element216 may be formed such that the planar shape thereof is a zigzag shape.In this case, the high-voltage high-resistance element 216 is formed ina zigzag shape from near the center of the P-type semiconductorsubstrate 211 toward the outside. A cross-sectional view of thesemiconductor device 200 shown in FIG. 12 sectioned along the sectionline X-X′ is similar to the cross-sectional view shown in FIG. 3.

In this way, by means of the semiconductor device 200 of Embodiment 2,similarly to the semiconductor device 200 of Embodiment 1, by cuttingoff the current passing through the resistive voltage divider elementduring standby of the control portion 130 by means of the switch 140provided in series with the resistive voltage divider element, thecontinuing flow of current through the resistive voltage divider elementduring standby of the control portion 130 can be prevented, and circuitpower consumption can be reduced. Further, by configuration as asemiconductor device 200 configured integrally with a first resistor 121and switch 140 configuring a resistive voltage divider element, thefirst resistor 121 and switch 140 can be integrated with the integratedcircuit 100.

Embodiment 3

FIG. 13 is a circuit diagram showing principle portions of theintegrated circuit of Embodiment 3 of the invention. In FIG. 13, thesame symbols are assigned for the configuration similar to theconfiguration shown in FIG. 1, and explanations are omitted. As shown inFIG. 13, the integrated circuit 100 of Embodiment 3 comprises, inaddition to the configuration of the integrated circuit 100 shown inFIG. 1, a third resistor 1421 and fourth resistor 1422, a controlportion 1430, second switch 1440, and second switching portion 1450.

The configurations of the third resistor 1421, fourth resistor 1422,control portion 1430, second switch 1440, and second switching portion1450 are similar to those of the first resistor 121, second resistor122, control portion 130, switch 140, and switching portion 150,respectively. The first resistor 121, switch 140, third resistor 1421,and second switch 1440 are configured as an integrally configuredsemiconductor device 200 (see FIG. 14).

Here, two sets of resistors and switches (the set of the first resistor121, second resistor 122 and switch 140, and the set of the thirdresistor 1421, fourth resistor 1422 and second switch 1440) are providedin parallel, in a configuration in which the control portion 130 andswitching portion 150 and the control portion 1430 and second switchingportion 1450 are respectively provided; but the two sets of resistorsand switches are connected to different input terminals of a commoncontrol portion 130, in a configuration in which the control portion1430 is omitted. In this case, the switch 140 and the second switch 1440may be simultaneously controlled by the switching portion 150, in aconfiguration in which the second switching portion 1450 is omitted.

FIG. 14 is a plane view showing principle portions of the semiconductordevice of Embodiment 3 of the invention. In FIG. 14, the same symbolsare assigned for the configuration similar to the configuration shown inFIG. 12, and explanations are omitted. Here, the second metal wiringline 218, gate electrode 227, and third metal wiring line 229 haveplanar shapes which are divided into two, respectively forming secondmetal wiring lines 218A, 218B, gate electrodes 227A, 227B, and thirdmetal wiring lines 229A, 229B, each with the shape of one-half of atrack shape.

The terminal 229 a of the third metal wiring line 229A is connected tothe control portion 130 (see FIG. 13). The terminal 229 a of the thirdmetal wiring line 229B is connected to the control portion 1430. Theterminal 227 a of the gate electrode 227A is connected to the switchingportion 150. The terminal 227 a of the gate terminal 227B is connectedto the second switching portion 1450. The inside end portion of thehigh-voltage high-resistance element 216 is connected to the first metalwiring line 217, and the outside end portion is connected to the secondmetal wiring line 218A.

Further, here the semiconductor device 200 further comprises ahigh-voltage high-resistance element 1501. The high-voltagehigh-resistance element 1501 is formed such that the planar shapethereof is a zigzag shape. The inside end portion of the high-voltagehigh-resistance element 1501 is connected to the first metal wiring line217, and the outside end portion is connected to the second metal wiringline 218B.

The cross-sectional view of the semiconductor device 200 sectioned alongsection line X-X′ shown in FIG. 14 is a drawing in which, in thecross-sectional view shown in FIG. 14, the symbols 218, 227 and 229 arerespectively replaced with the symbols 218A, 227A and 229A. Thecross-sectional view of the semiconductor device 200 sectioned alongsection line Y-Y′ is a drawing in which, in the cross-sectional viewshown in FIG. 3, the symbols 216, 218, 227 and 229 are respectivelyreplaced with the symbols 1501, 218B, 227B, and 229B.

In this way, by dividing into two the second metal wiring line 218, gateelectrode 227 and third metal wiring line 229, and by further comprisinga high-voltage high-resistance element 1501, integral configuration oftwo sets of resistors and switches connected in parallel is possible. Byincreasing the number of divisions of each of the electrodes, andfurther providing high-voltage high-resistance elements, three or moresets of resistors and switches can be integrally configured.

Here, a configuration is explained in which the gate electrode 227 isdivided into a gate electrode 227A and a gate electrode 227B, but whenthe control portion 130 has a plurality of input terminals, and two setsof resistors and switches are each connected to different inputterminals of the control portion 130, a configuration may be employed inwhich the gate electrode 227 is not divided, and the gate electrode 227is connected to the switching portion 150. In this case, each of theterminals 229 a of the third metal wiring line 229A and the third metalwiring line 229B is connected to a different input terminal of thecontrol portion 130.

In this way, by means of a semiconductor device 200 of Embodiment 3, theadvantageous results of the semiconductor device 200 of Embodiment 2 areobtained, and by further providing a high-voltage high-resistanceelement in parallel with the high-voltage high-resistance element 216, aplurality of sets of resistors and switches can be integrally configuredand integrated in an integrated circuit 100.

Embodiment 4

FIG. 15 is a plane view showing principle portions of the semiconductordevice of Embodiment 4 of the invention. FIG. 16 is a cross-sectionalview sectioning the semiconductor device shown in FIG. 15 along thesection line X-X′. In FIG. 15 and FIG. 16, the same symbols are assignedfor the configuration similar to the configuration shown in FIG. 2 andFIG. 3, and explanations are omitted. In Embodiments 1 to 3, cases wereexplained in which, by integrally configuring the resistance portion 210and MOSFET 220, the semiconductor device 200 could be made smaller; butthe resistance portion 210 and MOSFET 220 may be configured separately.

Here, a case is explained in which the resistance portion 210 and MOSFET220 are formed at a first position 1610 and second position 1620respectively, which are different, on the P-type semiconductor substrate211, such that the planar shapes thereof are for example separatecircular shapes. The second metal wiring line 218 does not have a seconddrain contact portion 218 b, and is electrically connected to the seconddrain N⁺ layer 222, second high-voltage application layer 402 and N-typedrain drift layer 221, via a fourth metal wiring line 1601 and firstwire 1602.

In addition to the configurations shown in FIG. 2 and FIG. 3, the MOSFET220 further comprises a fourth metal wiring line 1601 and first wire1602. The N-type drain drift layer 221 is formed such that the planarshape thereof is a circular ring shape surrounding the second position1620. The second high-voltage application layer 402 is formed such thatthe planar shape thereof is for example a circular shape surrounding thesecond position 1620.

The fourth metal wiring line 1601 is formed on the second insulatingfilm 228. The fourth metal wiring line 1601 is formed in for example acircular shape centered on the second position 1620. The fourth metalwiring line 1601 has a third drain contact portion 1601 a penetratingthe second insulating film 228. The third drain contact portion 1601 ais connected to the second drain N⁺ layer 222.

The third metal wiring line 229 is formed such that the planar shapethereof is for example a circular ring shape surrounding the fourthmetal wiring line 1601. The two end portions of the first wire 1602 areconnected to the second metal wiring line 218 and to the fourth metalwiring line 1601.

In this way, by means of the semiconductor device 200 of Embodiment 4, aswitch 140 is provided in series with the resistive voltage dividerelement configured by the first resistor 121 and second resistor 122,and by putting this switch 140 into the open state during standby of thecontrol portion 130, the current passing through the resistive voltagedivider element can be cut off. Hence the continuing flow of currentthrough the resistive voltage divider element during standby of thecontrol portion 130 can be prevented, and circuit power consumption canbe reduced.

Embodiment 5

FIG. 17 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3. In FIG. 17, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 3, and explanations are omitted. In the semiconductor device 200shown in FIG. 3, the N-type drift layer and the N-type drain drift layer(first diffusion layer and second diffusion layer) may be formed asepitaxial layers, as an N-type drift epitaxial layer 301 and N-typedrain drift epitaxial layer 302.

Such a semiconductor device 200 can be manufactured by forming, on aportion of the surface layer of an N-type epitaxial layer grown on thesurface of the P-type semiconductor substrate 211, a P-type layer 303(seventh diffusion layer) reaching the P-type semiconductor substrate211. By means of the P-type layer 303, the epitaxial layer formed on thesurface of the P-type semiconductor substrate 211 is separated from theN-type drift epitaxial layer 301 and the N-type drain drift epitaxiallayer 302.

In this way, by means of the semiconductor device 200 of Embodiment 5,advantageous results similar to those of the semiconductor device 200 ofEmbodiment 1 can be obtained.

Embodiment 6

FIG. 18 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3. In FIG. 18, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 3, and explanations are omitted. In the semiconductor device 200shown in FIG. 3, an N-type drain drift layer 221 may be formed along theside walls and bottom portion of a trench 601 formed in the P-typesemiconductor substrate 211. The interior of the trench 601 is filledwith a dielectric material 602.

In this way, by means of the semiconductor device 200 of Embodiment 6,advantageous results similar to those of the semiconductor device 200 ofEmbodiment 1 can be obtained. Further, compared with Embodiment 1, thewidth of the semiconductor device 200 (for example, the distance betweenX-X′ in FIG. 2) can be made small.

Embodiment 7

FIG. 19 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 3. In FIG. 19, the same symbols areassigned for the configuration similar to the configuration shown inFIG. 3, and explanations are omitted. In the semiconductor device 200shown in FIG. 3, a fifth metal wiring line 701, sixth metal wiring line702, and seventh metal wiring line 703 may be provided.

A third insulating film 704 is formed on the surfaces of the first metalwiring line 217, second metal wiring line 218, and third metal wiringline 229. The fifth metal wiring line 701 is formed above the firstmetal wiring line 217, and by means of a contact portion penetrating thethird insulating film 704, is electrically connected to the first metalwiring line 217. The sixth metal wiring line 702 is formed above thesecond metal wiring line 218, and is electrically connected to thesecond metal wiring line 218 by a contact portion penetrating the thirdinsulating film 704. The seventh metal wiring line 703 is formed abovethe third metal wiring line 229, and is electrically connected to thethird metal wiring line 229 by a contact portion penetrating the thirdinsulating film 704.

The sixth metal wiring line 702 and seventh metal wiring line 703 areformed so as to be mutually removed. And, formation is such that thedistance between the sixth metal wiring line 702 and the seventh metalwiring line 703 is narrower than the distance between the second metalwiring line 218 and the third metal wiring line 229. The reason for thisis as follows. In the MOSFET 220, at the surface of a passivation film(not shown) formed on a metal wiring line, due to the accumulation ofmobile ions, distortions occur in the source-drain equipotentialdistribution. By providing a sixth metal wiring line 702 and seventhmetal wiring line 703, and decreasing the aperture portion in the metalwiring lines between source and drain, to suppress distortions in thesource-drain equipotential distribution, it is possible to render theoccurrence of electric field concentration less likely. Further, it ispreferable that the sixth metal wiring line 702 and seventh metal wiringline 703 be separated to an extent that electric field concentrationdoes not readily occur.

The fifth metal wiring line 701 and sixth metal wiring line 702 areformed so as to be mutually removed. Further, it is preferable that thefifth metal wiring line 701 and sixth metal wiring line 702 be removedto such an extent that electric field concentration arising fromdistortions in the equipotential distribution does not occur. Thedistance between the fifth metal wiring line 701 and the sixth metalwiring line 702 may be equal to or greater than the distance between thefirst metal wiring line 217 and the second metal wiring line 218. Thereason for this is that in the resistance portion 210, a high-voltagehigh-resistance element 216 is formed, so that the effect of mobile ionsaccumulated on the surface of the passivation film is small.

In this way, by means of the semiconductor device 200 of Embodiment 7,advantageous results similar to those of the semiconductor device 200 ofEmbodiment 1 can be obtained. Further, distortions in the equipotentialdistribution between source and drain of the MOSFET 220 can besuppressed, and the occurrence of electric field concentration can bereduced.

Embodiment 8

FIG. 20 is a circuit diagram showing the switching power supply ofEmbodiment 8 of the invention. The switching power supply of Embodiment8 is a power factor improvement circuit 1800. In the power factorimprovement circuit 1800, the same symbols are assigned for theconfiguration similar to the configuration of the power factorimprovement circuit 1800 shown in FIG. 35, and explanations are omitted.Here, the first resistive voltage divider circuit 1809 connected to theoutput high-voltage line which is a high-voltage line is provided withinthe power factor improvement control IC 1803. Further, the firstresistive voltage divider circuit 1809 comprises a switch 1809 c.Further, the switching portion 150 is also provided within the powerfactor improvement control IC 1803.

The resistor 1809 a and switch 1809 c in the first resistive voltagedivider circuit 1809 are configured integrally by means of thesemiconductor device 200. The first metal wiring line 217 of thesemiconductor device 200 of the first resistive voltage divider circuit1809 is connected to the output terminal of the second rectifier 1806via the IN terminal 1816. The third metal wiring line 229 of thesemiconductor device 200 of the first resistive voltage divider circuit1809 is connected to the AMP 1818 of the control portion 130.

A NAND circuit 1825 of the switching portion 150 (see FIG. 1) isconnected to the terminal 227 a (see FIG. 2) of the gate electrode 227of the semiconductor device 200 in the first resistive voltage dividercircuit 1809. The switching portion 150 applies (on) a voltage equal toor greater than a threshold value voltage to the terminal 227 a of thegate electrode 227 during driving of the power factor improvementcontrol IC 1803, and does not apply (off) a voltage equal to or greaterthan the threshold value voltage to the terminal 227 a of the gateelectrode 227 during standby of the power factor improvement control IC1803.

Here, the specific operation of the control portion 130 is explained.When the voltage of the ZCD terminal 1813 falls, a set signal is inputto RSFF 1815 from COMP 1814, and the switching transistor 1804 is turnedon. COMP 1820 compares the signal resulting from comparison by AMP 1818of the voltage-divided voltage of the IN terminal 1816 and VREF 1817with the triangle wave signal generated by RAMP 1819, and if the outputsignal of AMP 1818 is below the signal of RAMP 1819, a reset signal isinput from COMP 1820 to RSFF 1815, a low signal is output from OUT 1821,and the switching transistor 1804 is turned off. If the voltage of theIS terminal 1822 is above VOCP 1823, a reset signal is input from COMP1824 to RSFF 1815, a low signal is output from OUT 1821, and theswitching transistor 1804 is turned off.

Next, the specific operation of the switching portion 150 is explained.When VCC 1826 falls to be equal to or less than a fixed voltage, or whenthe ZCD terminal 1813 falls to be equal to or less than a fixed voltage,and a fixed time has elapsed, the power factor improvement control IC1803 enters standby mode, the 500 V switch 1809 c is turned OFF, thepath of current flowing from the output voltage line (IN terminal 1816)which is the high-voltage line to ground is cut off, and standby poweris reduced. Conversely, when VCC 1826 rises to be equal to or above afixed voltage, or when the ZCD terminal 1813 rises to be equal to orgreater than a fixed voltage, the power factor improvement control IC1803 enters operation mode, and the switch 1809 c is turned ON.

FIG. 21 is a circuit diagram showing Modified Example 1 of the switchingpower supply of Embodiment 8 of the invention. In the power factorimprovement circuit 1800 shown in FIG. 21, the same symbols are assignedfor the configuration similar to the configuration of the power factorimprovement circuit 1800 shown in FIG. 20, and explanations are omitted.Here, in addition to the first resistive voltage divider circuit 1809, asecond resistive voltage divider circuit 1808 is provided outside thepower factor improvement control IC 1803.

Specifically, the MUL terminal 1827 of the power factor improvementcontrol IC 1803 is connected to the intermediate node of the secondresistive voltage divider circuit 1808 comprising the resistor 1808 aand the resistor 1808 b. This is in order to use the second resistivevoltage divider circuit 1808 to perform resistive voltage division ofthe voltage obtained by rectifying the alternating-current voltage ofthe power supply capacitor 1802, lowering the high voltage to a lowvoltage which can be input to the power factor improvement control IC1803, and to input the voltage to the MUL terminal 1827.

Here, the specific operation of the control portion 130 is explained.When the voltage of the ZCD terminal 1813 falls, a set signal is inputfrom COMP 1814 to RSFF 1815, and the switching transistor 1804 is turnedon. The signal resulting from comparison by AMP 1818 of thevoltage-divided voltage of the IN terminal 1816 and VREF 1817 ismultiplied by the resistive voltage-divided voltage of the MUL terminal1827 by MUL 1828. This signal and the voltage VOCP 1823 of the ISterminal 1822 are compared by COMP 1820, and when the voltage of the ISterminal 1822 becomes high, a reset signal is input from COMP 1820 toRSFF 1815, a low signal is output from OUT 1821, and the switchingtransistor 1804 is turned off.

Next, the specific operation of the switching portion 150 is explained.When VCC 1826 falls to be equal to or less than a fixed voltage, or whenthe ZCD terminal 1813 falls to be equal to or less than a fixed voltage,and a fixed time has elapsed, the power factor improvement control IC1803 enters standby mode, the 500 V switch 1809 c is turned OFF, thepath of current flowing from the output voltage line (IN terminal 1816)to ground via the first resistive voltage divider circuit 1809 is cutoff, and standby power is reduced. Conversely, when VCC 1826 rises to beequal to or above a fixed voltage, or when the ZCD terminal 1813 risesto be equal to or greater than a fixed voltage, the power factorimprovement control IC 1803 enters operation mode, and the switch 1809 cis turned ON.

FIG. 22 is a circuit diagram showing Modified Example 2 of the switchingpower supply of Embodiment 8 of the invention. In the power factorimprovement circuit 1800 shown in FIG. 22, the same symbols are assignedfor the configuration similar to the configuration of the power factorimprovement circuit 1800 shown in FIG. 21, and explanations are omitted.Here, a second resistive voltage divider circuit 1808 is provided withinthe power factor improvement control IC 1803.

Specifically, the MUL 1828 of the power factor improvement control IC1803 is connected to the intermediate node of the second resistivevoltage divider circuit 1808 comprising the semiconductor device 200 asa resistance and the resistor 1808 b. This is in order to use the secondresistive voltage divider circuit 1808 to perform resistive voltagedivision of the line voltage of the high-voltage line (inputhigh-voltage line) obtained by rectifying the alternating-currentvoltage using the first rectifier 1801 and power supply capacitor 1802,lowering the high voltage to a low voltage which can be input to MUL1828 of the power factor improvement control IC 1803, and to input thevoltage to MUL 1828.

The first metal wiring line 217 of the semiconductor device 200 in thesecond resistive voltage divider circuit 1808 is connected to the outputterminal of the first rectifier 1801 via the MUL terminal 1827. Thethird metal wiring line 229 of the semiconductor device 200 in thesecond resistive voltage divider circuit 1808 is connected to MUL 1828of the power factor improvement control IC 1803.

Here, a case was explained in which a semiconductor device 200 wasprovided in both the second resistive voltage divider circuit 1808 andin the first resistive voltage divider circuit 1809, but thesesemiconductor devices 200 may be integrally configured using thesemiconductor device 200 shown in FIG. 14. By this means, the size ofthe power factor improvement circuit 1800 can be reduced.

Here, the specific operation of the control portion 130 is explained.When the voltage of the ZCD terminal 1813 falls, a set signal is inputfrom COMP 1814 to RSFF 1815, and the switching transistor 1804 is turnedon. The signal resulting from comparison by AMP 1818 of thevoltage-divided voltage of the IN terminal 1816 and VREF 1817 ismultiplied by the resistive voltage-divided voltage of the MUL terminal1827 by MUL 1828. This signal and the voltage VOCP 1823 of the ISterminal 1822 are compared by COMP 1820, and when the voltage of the ISterminal 1822 becomes high, a reset signal is input from COMP 1820 toRSFF 1815, a low signal is output from OUT 1821, and the switchingtransistor 1804 is turned off.

Next, the specific operation of the switching portion 150 is explained.When VCC 1826 falls to be equal to or less than a fixed voltage, or whenthe ZCD terminal 1813 falls to be equal to or less than a fixed voltageand a fixed time has elapsed, the power factor improvement control IC1803 enters standby mode, the 500 V switches 1808 c and 1809 c areturned OFF, the path of current flowing from the input voltage line (MULterminal 1827) to ground via the second resistive voltage dividercircuit 1808 and the path of current flowing from the output voltageline (IN terminal 1816) to ground via the first resistive voltagedivider circuit 1809 are cut off, and standby power is reduced.Conversely, when VCC 1826 rises to be equal to or above a fixed voltage,or when the ZCD terminal 1813 rises to be equal to or greater than afixed voltage, the power factor improvement control IC 1803 entersoperation mode, and the switch 1809 c is turned ON.

Embodiment 9

FIG. 23 is a circuit diagram showing the configuration of the switchingpower supply device of Embodiment 9 of the invention. A semiconductordevice 200 of this invention can also be applied to a switching powersupply device such as that shown in FIG. 23. In the switching powersupply device, the control IC 31 incorporates a resistor (here called abrownout resistor), not shown, to detect a fall in the AC input voltage.

The control IC 31 has a VH terminal at approximately 500 V for example(high-voltage input terminal) 32; a feedback input terminal (hereaftercalled the “FB terminal”) 33; a current sensing input terminal(hereafter called the “IS terminal”) 34; power supply voltage terminal(hereafter called the “VCC terminal”) 35 of the control IC 31; gatedriving terminal (hereafter called the “OUT terminal”) 36 of the MOSFET19; and ground terminal (hereafter called the “GND terminal”) 37. The VHterminal 32 is a terminal which supplies current to the VCC terminal 35during power supply startup. Here, a voltage obtained by rectifying andsmoothing the AC input voltage is applied to the VH terminal 32. The GNDterminal 37 is grounded.

AC input is supplied to the rectifier 2 via the AC input terminal 1. Therectifier 2 is connected to the AC input terminal 1, and performsfull-wave rectification of the AC input. The power supply capacitor 3 isconnected in parallel to the output terminal of the rectifier 2, and ischarged by the voltage obtained by rectifying the alternating-currentvoltage, output from the rectifier 2. The charged power supply capacitor3 becomes a power supply to supply a voltage to the primary coil 6 of atransformer 5. The power supply capacitor 3 is connected to the VHterminal 32 of the control IC 31.

The primary coil 6 is connected between the power supply capacitor 3 andthe drain terminal of the MOSFET 19, which functions as a switchingelement. The source terminal of the MOSFET 19 is connected to the ISterminal 34 of the control IC 31 and to one end of a resistor 20. Theother end of the resistor 20 is grounded. By means of this resistor 20,the current flowing in the MOSFET 19 is converted into a voltage, andthis voltage is applied to the IS terminal 34. The gate terminal of theMOSFET 19 is connected to the OUT terminal 36 of the control IC 31.

One end of an auxiliary coil 7 of the transformer 5 is connected inparallel with the anode terminal of the rectifying diode 17. The otherend of the auxiliary coil 7 is grounded. Current induced by switchingoperation of the MOSFET 19 flows in the auxiliary coil 7. The rectifyingdiode 17 rectifies the current flowing in the auxiliary coil 7, andcharges the smoothing capacitor 18 connected to the cathode terminalthereof. The smoothing capacitor 18 is connected to the VCC terminal 35of the control IC 31, and is a direct-current power supply to causecontinuation of switching operation of the MOSFET 19.

Through switching operation of the MOSFET 19, a voltage based on thevoltage of the power supply capacitor 3 is induced across the secondarycoil 8 of the transformer 5. One end of the secondary coil 8 isconnected to the anode terminal of the rectifying diode 9. The cathodeterminal of the rectifying diode 9 and the other end of the secondarycoil 8 are connected to the DC output terminal 12. Further, a smoothingcapacitor 10 is connected between the cathode terminal of the rectifyingdiode 9 and the other end of the secondary coil 8. The rectifying diode9 rectifies the current flowing in the secondary coil 8, and charges thesmoothing capacitor 10. The charged smoothing capacitor 10 supplies adirect-current output (DC output), controlled so as to assume a desireddirect-current voltage value, to a load, not shown, connected to the DCoutput terminal 12.

Further, a series resistance circuit comprising two resistors 15, 16 andone end of a resistor 11 are connected to a connection node of the anodeterminal of the rectifying diode 9 and the DC output terminal 12. Theother end of the resistor 11 is connected to the anode terminal of aphotodiode 13 which configures a photocoupler. The cathode terminal ofthe photodiode 13 is connected to the cathode terminal of a shuntregulator 14. The anode terminal of the shunt regulator 14 is grounded.These resistors 11, 15, 16, the photodiode 13, and the shunt regulator14, form a voltage detection/feedback circuit which detects thedirect-current output voltage across the smoothing capacitor 10, andadjusts this direct-current output voltage.

An optical signal is output from the photodiode 13, so as to adjust thedirect-current output voltage across the smoothing capacitor 10 to aprescribed direct-current voltage value based on a setting value of theshunt regulator 14. This optical signal is received by a phototransistor22 which together with the photodiode 13 configures a photocoupler, andbecomes a feedback signal for the control IC 31. The phototransistor 22is connected to the FB terminal 33 of the control IC 31, and thefeedback signal is input to this FB terminal 33. The phototransistor 22is connected to a capacitor 21. This capacitor 21 is a noise filter forthe feedback signal.

Within the control IC 31, a first resistive voltage divider circuit 1809is provided between the VH terminal 32 and AMP 1818. The first resistivevoltage divider circuit 1809 comprises the semiconductor device 200 as aresistance and a resistor 1809 b. This is in order to use the firstresistive voltage divider circuit 1809 to perform resistive voltagedivision of the voltage of the power supply capacitor 3, comprising avoltage obtained by rectifying an alternating-current voltage or adirect-current voltage, lowering the high voltage to a low voltage whichcan be input to AMP 1818, and to input the voltage to AMP 1818.

The first metal wiring line 217 of the semiconductor device 200 in thefirst resistive voltage divider circuit 1809 is connected to the outputterminal of the rectifier 2. The third metal wiring line 229 of thesemiconductor device 200 in the first resistive voltage divider circuit1809 is connected to AMP 1818.

A switching portion 150 (see FIG. 1) is connected to the terminal 227 a(see FIG. 2) of the gate electrode 227 of the semiconductor device 200in the first resistive voltage divider circuit 1809. The switchingportion 150 applies a voltage (on) at or above a threshold value voltageto the terminal 227 a of the gate electrode 227 during driving of thecontrol IC 31, and does not apply a voltage (off) at or above athreshold value voltage to the terminal 227 a of the gate electrode 227during standby of the control IC 31.

Here, the specific operation of the control portion 130 is explained.When a set signal from OSC 1829 is input to RSFF 1815, a high signal isoutput from the OUT terminal 36, and the MOSFET 19 is turned on. COMP1820 compares the voltage of the IS terminal 34 and the voltage of theFB terminal 33, and when the voltage of the IS terminal 34 is higherthan the voltage of the FB terminal 33, a reset signal from COMP 1820 isinput to RSFF 1815, a low signal is output from the OUT terminal 36, andthe MOSFET 19 is turned off.

Further, the resistively voltage-divided voltage of the VH terminal 32is input to AMP 1818, VOCP 1830 is subtracted (see for example JapanesePatent Application Laid-open No. 2005-94835), and when VOCP 1830 aftersubtraction is higher than the voltage of the IS terminal 34 also, areset signal from COMP 1820 is input to RSFF 1815, a low signal isoutput from the OUT terminal 36, and the MOSFET 19 is turned off.

Next, the specific operation of the switching portion 150 is explained.When the VCC terminal 35 falls to be equal to or less than a fixedvoltage, or when the FB terminal 33 falls to be equal to or less than afixed voltage, and a fixed time has elapsed, the control IC 31 entersstandby mode, the switch 1809 c is turned off, and standby power isreduced. Conversely, when the VCC terminal 35 rises to be equal to orabove a fixed voltage, or the FB terminal 33 rises to be equal to orabove a fixed voltage, the control IC 31 enters the operation mode, andthe switch 1809 c is turned ON.

Embodiment 10

FIG. 24 is a cross-sectional view showing a modified example of thesemiconductor device shown in FIG. 1. In FIG. 24, the same symbols areassigned for the configuration shown in FIG. 1, and explanations areomitted. In the integrated circuit 100 shown in FIG. 1, a fifth resistor123 may be provided. Further, the fifth resistor 123 and second resistor122 may be trimming resistors.

One end of the fifth resistor 123 is connected to one end of the switch140, and the other end of the fifth resistor 123 is connected to one endof the second resistor 122. The input terminal of the control portion130 is connected to the intermediate node of the fifth resistor 123 andthe second resistor 122. The first resistor 121, second resistor 122,and fifth resistor 123 form a resistive voltage divider element whichperforms resistive voltage division of a voltage obtained by rectifyingan alternating-current voltage input from the high-voltage line 110, ora direct-current voltage.

FIG. 25 is a plane view showing principle portions of a trimmingresistor formed on a semiconductor substrate. FIG. 26 is across-sectional view sectioning the trimming resistor shown in FIG. 25along the section line Z-Z′. FIG. 27 is a circuit diagram showing thetrimming resistor shown in FIG. 25. A third oxide film 803 is formed onthe surface layer of the P-type semiconductor substrate 211 on thesource side of the MOSFET 220. A trimming resistor 802 is buried in aregion above the third oxide film 803 in the second insulating film 228,on the source side of the MOSFET 220. A metal wiring line for trimming801 is formed above the trimming resistor 802, and is electricallyconnected to the trimming resistor 802 by a contact portion penetratingthe second insulating film 228. Further, the metal wiring line fortrimming 801 is electrically connected to the third metal wiring line229 via the trimming resistor 802.

The metal wiring line for trimming 801 is formed in a plurality ofplaces on the trimming resistor 802. One among a plurality of metalwiring lines for trimming 801 is a voltage-dividing wiring line 801 b.Each metal wiring line for trimming 801 is electrically connected by adisconnection portion for trimming 801 a (resistance adjustment portion)formed removed from the trimming resistor 802. By disconnecting adisconnection portion for trimming 801 a, and separating a portion ofthe metal wiring line for trimming 801, adjustment to a desiredresistance value is possible.

In this way, by means of the semiconductor device of Embodiment 10,advantageous results similar to those of the semiconductor device ofEmbodiment 1 can be obtained. Further, by forming the fifth resistor 123as a trimming resistor, a portion of which can be separated, theresistance value of the fifth resistor 123 can be adjusted, and theoverall resistance value and voltage division ratio of the resistivevoltage divider element can be adjusted. By this means, because avoltage obtained by rectifying an alternating-current voltage or adirect-current voltage is input from the high-voltage line 110 to theadjusted resistive voltage divider element, the voltage-divided voltagecan be adjusted with still better precision than in Embodiment 1.

Embodiment 11

FIG. 28 is a circuit diagram showing a switching power supply device,comprising a startup element separate from the switching power supplydevice shown in FIG. 23. In FIG. 28, the same symbols are assigned forthe configuration shown in FIG. 23, and explanations are omitted. As thestartup element, for example a normally-on type JFET 23 is provided.

In the control IC 31 are provided a first resistive voltage dividercircuit 1809, MOSFET 19, JFET 23, control portion 130, and switchingportion 150. The first resistive voltage divider circuit 1809 comprisesthe resistor 1809 a within the semiconductor device 200 and the switch1809 c, resistor 1809 b, and resistor 1809 d. In the switching portion150 are provided, for example, a startup circuit 1831, UVLO 1832,regulator 1833, brownout comparator (hereafter called a “BO comparator”)1834, and reference power supply 1840. In the control portion 130 areprovided, for example, an oscillator 1835, driver circuit 1836, outputamplifier 1837, pulse width modulation comparator (hereafter called a“PWM comparator”) 1838, and latch circuit 1839. The JFET 23 and startupcircuit 1831 supply a current to the VCC terminal 35 at the time ofstartup of the power supply.

The first resistive voltage divider circuit 1809 is configured similarlyto FIG. 24. The third metal wiring line 229 of the semiconductor device200 in the first resistive voltage divider circuit 1809 is connected tothe BO comparator 1834 via the resistor 1809 d. The drain terminal ofthe JFET 23 is connected to the VH terminal 32, in parallel with thefirst resistive voltage divider circuit 1809. The source terminal of theJFET 23 is connected to the startup circuit 1831. The gate terminal ofthe JFET 23 is grounded. The JFET 23 supplies a current to the VCCterminal 35 via the startup circuit 1831.

UVLO 1832 is connected to the VCC terminal 35 and the startup circuit1831. UVLO 1832 halts supply of current from the startup circuit 1831 tothe VCC terminal 35 when, due to current supplied from the startupcircuit 1831, the voltage of the VCC terminal 35 rises to the voltagenecessary for operation of the control IC 31. Thereafter the supply ofcurrent to the VCC terminal 35 is performed from the auxiliary coil 7.The regulator 1833 is connected to the VCC terminal 35, and based on thevoltage of the VCC terminal 35 generates the reference voltage necessaryfor operation of each of the portions of the control IC 31. After thepower supply has started up, the control IC 31 is driven by thereference voltage output from the regulator 1833.

An inverting input terminal and non-inverting input terminal of the PWMcomparator 1838 are respectively connected to the IS terminal 34 and tothe FB terminal 33. The output of the PWM comparator 1838 is invertedaccording to the magnitude relation of the voltage of the invertinginput terminal and the voltage of the non-inverting input terminal. Theoutput of the PWM comparator 1838 is input to the driver circuit 1836.

The driver circuit 1836 is connected to the oscillator 1835, andoscillation signals from the oscillator 1835 are input thereto. When aturn-on signal from the oscillator 1835 is input to the driver circuit1836, and moreover the voltage of the non-inverting input terminal ofthe PWM comparator 1838 (that is, the voltage of the FB terminal 33) ishigher than the voltage of the inverting input terminal (that is, thevoltage of the IS terminal 34), the output signal of the driver circuit1836 enters the high state. The output amplifier 1837 amplifies thehigh-state signal output from the driver circuit 1836, and drives thegate of the MOSFET 19. The drain terminal of the MOSFET 19 is connectedto the OUT terminal 36, and the output of the MOSFET 19 is output to theOUT terminal 36.

On the other hand, if the voltage of the inverting input terminal of thePWM comparator 1838 is higher than the voltage of the non-invertinginput terminal, the PWM comparator 1838 is inverted, and the outputsignal of the driver circuit 1836 enters the low state. The outputamplifier 1837 amplifies the low-state signal output from the drivercircuit 1836, which is supplied to the gate of the MOSFET 19 via the OUTterminal 36. Hence the MOSFET 19 enters the off state, and current inthe MOSFET 19 no longer flows. In this way, by changing the thresholdlevel of the PWM comparator 1838 according to the secondary-side outputvoltage, and by executing control to vary the on interval of the MOSFET19, the secondary-side output voltage is stabilized.

Further, the inverting input terminal of the BO comparator 1834 isconnected to the reference power supply 1840. The output of the BOcomparator 1834 is inverted according to the magnitude relation of thevoltage of the inverting input terminal and the voltage of thenon-inverting input terminal. A high voltage is resistivelyvoltage-divided by the first resistive voltage divider circuit 1809, anda low-voltage signal which can be input to the BO comparator 1834 isinput to the BO comparator 1834. The output of the BO comparator 1834 isinput to the driver circuit 1836.

In a state in which a high-state signal is being output from the drivercircuit 1836, when the voltage of the non-inverting input terminal ofthe BO comparator 1834 is lower than the voltage of the inverting inputterminal, the output signal of the driver circuit 1836 remains in thehigh state. When the voltage supplied from the AC input disappears, andthe primary-side input voltage falls, the voltage of the non-invertinginput terminal of the BO comparator 1834 becomes lower than the voltageof the inverting input terminal. Then, the output signal of the drivercircuit 1836 is inverted to enter the low state, and switching operationof the MOSFET 19 is halted.

The latch circuit 1839 is connected to the driver circuit 1836. When arise in the secondary-side output voltage, heat generation by thecontrol IC 31, a drop in the secondary-side output voltage, or anotheranomalous state is detected, the latch circuit 1839 puts the output ofthe driver circuit 1836 to a forced low state for overvoltageprotection, overheating protection, or overcurrent protection, and haltsthe supply of power to the secondary-side output. This state is helduntil the VCC power supply voltage falls and the control IC 31 is reset.While no limitations in particular are imposed, elements constitutingeach of the circuits and similar of the control IC 31 are for exampleformed on the same semiconductor substrate.

FIG. 29 is a plane view showing principle portions of the semiconductordevice of Embodiment 11 of the invention. In FIG. 29, the same symbolsare assigned for the configuration similar to the configuration shown inFIG. 2 and FIG. 3, and explanations are omitted. The semiconductordevice 200 comprises a high-voltage high-resistance integral type MOSFETmade integral with a resistor 1809 a (first resistor) and switch 1809 c,and a JFET 23 (startup element). Although not shown, a switching portion150, control portion 130, and resistor 1809 b (second resistor) are alsoformed on the same semiconductor substrate. The resistor 1809 aconstituting this high-voltage high-resistance integral type MOSFET isused as a high-potential side resistor of a brownout resistor (inputvoltage detection).

The semiconductor device 200 is formed such that the integrally formedresistance portion and MOSFET and the JFET are each formed with planarshapes which are separate circular shapes, for example, at a thirdposition 1710 and a fourth position 1720 which are different on theP-type semiconductor substrate 211. The resistance portion is equivalentto the resistor 1809 a (high-voltage high-resistance element 216). TheMOSFET is equivalent to the switch 1809 c (MOSFET 220). The JFET isequivalent to the JFET 23.

The integrally formed resistance portion and MOSFET comprise a secondwire 1701 in addition to the configurations shown in FIG. 2. The firstmetal wiring line 217 of the resistance portion is electricallyconnected to the terminal 1704, which is an external connectionterminal, via the second wire 1701. The terminal 1704 is equivalent tothe VH terminal 32.

The JFET 23 comprises an eighth metal wiring line 901 (fifth electrode),ninth metal wiring line 1702, and third wire 1703. The ninth metalwiring line 1702 of the JFET 23 is electrically connected to theterminal 1704 via the third wire 1703.

The eighth metal wiring line 901 is formed such that the planar shapethereof is for example a circular ring shape surrounding the ninth metalwiring line 1702. Further, the eighth metal wiring line 901 has aterminal, not shown, connected for example to the startup circuit (seeFIG. 28). Further, the eighth metal wiring line 901 is connected to forexample a source N⁺ layer formed on the surface layer of thesemiconductor substrate 211 via a source contact portion 902.

The ninth metal wiring line 1702 is formed in for example a circularshape centered on the fourth position 1720. The ninth metal wiring line1702 is connected for example to a drain N⁺ layer formed on the surfacelayer of the semiconductor substrate 211 via a contact portion.

In this way, by means of the semiconductor device 200 of Embodiment 11,advantageous results similar to those of the semiconductor device ofEmbodiment 1 can be obtained. Further, in a circuit using the JFET 23 asa startup element also, a first resistive voltage divider circuit 1809can be provided, and advantageous results similar to those of thesemiconductor device of Embodiment 9 can be obtained. Further, byforming the JFET 23 within the control IC 31, the area of for example aprinted circuit board or similar on which the control IC 31 is mountedcan be made small. Further, by forming the startup element on the samesemiconductor substrate as the resistor 1809 a and switch 1809 c,functions can be added without increasing the number of connectionterminals. Further, by making a portion of a high-voltagehigh-resistance integral-type MOSFET integral with the resistor 1809 aand switch 1809 c a high-potential side resistor of a brownout resistor,the current flowing in the resistive voltage divider circuit when thestartup element is off can be cut off, and power consumption can befurther reduced compared with Embodiment 1.

Embodiment 12

FIG. 30 is a circuit diagram showing a modified example of thesemiconductor device shown in FIG. 1. In FIG. 30, the same symbols areassigned for the configuration shown in FIG. 1, and explanations areomitted. A startup element 160 is formed integrally with thesemiconductor device 200 shown in FIG. 1. Further, in the integratedcircuit 100 shown in FIG. 1, a fifth resistor 123 is formed. There arealso cases in which this fifth resistor is not formed.

The fifth resistor 123 is connected similarly to FIG. 24. The startupelement 160 is connected in series between the first resistor 121 andfor example a connection terminal connecting the startup circuit. Thestartup element 160 supplies current to for example the VCC terminal viaa connection terminal. The startup element 160 comprises for example anormally-on type JFET.

In the JFET constituting the startup element 160, the drain terminal isconnected to the first resistor 121, and the source terminal comprises aconnection terminal which for example connects the startup circuit. Thegate terminal of the JFET is grounded. Further, a switch 140constituting a MOSFET is connected in parallel. This JFET is configuredas a semiconductor device 200 (see FIG. 31 to FIG. 33) configuredintegrally with the MOSFET and first resistor 121.

FIG. 31 is a plane view showing principle portions of the semiconductordevice of Embodiment 12 of the invention. FIG. 32 is a cross-sectionalview sectioning the semiconductor device shown in FIG. 31 along thesection line A-O. FIG. 33 is a cross-sectional view sectioning thesemiconductor device shown in FIG. 31 along the section line C-C′. Thecross-sectional view of the semiconductor device shown in FIG. 31sectioned along the section line B-O is similar to FIG. 5. In Embodiment12, the same symbols are assigned for the configuration shown in FIG. 5,and explanations are omitted. In Embodiment 11, a semiconductor device200 was explained with a configuration in which a startup element 160was formed separately from the integrally formed first resistor 121 andswitch 140; but the semiconductor device 200 may also be a high-voltagehigh-resistance integral type MOSFET in which the first resistor 121,switch 140, and startup element 160 (see FIG. 30) are formed integrally.A JFET is formed in a portion of this MOSFET. Although not shown, theswitching portion 150, control portion 130, and second resistor 122 arealso formed on the same semiconductor substrate.

The semiconductor device 200 comprises an integrally configuredresistance portion 210, MOSFET 220 (see FIG. 5) and JFET 230. Theresistance portion 210 is equivalent to the first resistor 121. TheMOSFET 220 is equivalent to the switch 140. The JFET 230 is equivalentto the startup element 160. The portion of the semiconductor device 200configured by the MOSFET 220 is configured similarly to FIG. 5. Thethird high-voltage application layer 501 is formed only in the MOSFET220. The resistance portion 210 of the semiconductor device 200 in thesection line A-O in which the JFET 230 is configured has a configurationsimilar to FIG. 5.

The JFET 230 comprises the P-type semiconductor substrate 211 commonwith the resistance portion 210, an N-type drain drift layer 221, seconddrain N⁺ layer 222, second metal wiring line 218 common with theresistance portion 210, source N⁺ layer 224, second oxide film 225, gateelectrode 227, second insulating film 228, and eighth metal wiring line901. Each of the portions of the JFET 230 is common to the MOSFET 220(excepting the eighth metal wiring line 901).

The source N⁺ layer 224 (fourth diffusion layer) is formed on a portionof the surface layer of the N-type drain drift layer 221. The secondoxide film 225 is formed above a region of the N-type drain drift layer221 in which the second drain N⁺ layer 222 and source N⁺ layer 224 arenot formed. The gate electrode 227 (third electrode) is formed above thesecond oxide film 225.

The eighth metal wiring line 901 (fifth electrode) is formed above thesecond insulating film 228. Further, the eighth metal wiring line 901has a terminal 901 a connected for example to the startup circuit (seeFIG. 30). The eighth metal wiring line 901 has a source contact portion902 which penetrates the second insulating film 228. The source contactportion 902 is connected to the source N⁺ layer 224.

In Embodiment 12, the high-voltage high-resistance element 216 is forexample formed in a spiral shape, similarly to Embodiment 1. In thehigh-voltage high-resistance element 216, a resistor is formed which isnecessary, when a high voltage is applied to the high-voltagehigh-resistance element 216, to lower the voltage to a voltage that canbe detected in the control portion 130. For example, of an overallresistance value of 4 MΩ, 3.96 MΩ can be formed as the high-voltagehigh-resistance element 216, so that when a high voltage of 500 V isapplied to the high-voltage high-resistance element 216 a detectablevoltage of 1/100 results.

In this way, by means of the semiconductor device 200 of Embodiment 12,advantageous results similar to those of Embodiment 1 and Embodiment 11can be obtained. Further, by means of a configuration as a semiconductorsubstrate 200 in which a first resistor 121, switch 140, and startupelement 160 are integrally configured, the element area of the controlIC can be made smaller than in Embodiment 11.

Each of the embodiments was described as a modified example ofEmbodiment 1, but mutual application is also possible among thesemiconductor devices of Embodiments 2 to 12. For example, theconfiguration of the semiconductor device of Embodiment 12 can forexample be applied to Embodiment 2. Further, the JFET provided within acontrol IC is not limited to the function of supplying current to theVCC terminal, and can be used for various functions.

As explained above, by means of each of the embodiments, a switch isprovided in series with a resistive voltage divider element, and byputting the switch into the open state during standby of the integratedcircuit and cutting off the current passing through the resistivevoltage divider element, the continuing flow of current through theresistive voltage divider element during standby of the integratedcircuit can be prevented. Hence circuit power consumption can bereduced. Further, a voltage divider circuit can be integrated into asemiconductor device into which the output of the voltage dividercircuit is input.

In Embodiments 1 to 12 (excepting Embodiment 4), configurations wereexplained in which the semiconductor device 200 is equivalent to thefirst resistor 121 and switch 140 of the integrated circuit 100; but thesemiconductor device 200 can be used in general configurations in whicha resistor and switch are connected in series in an integrated circuit.Further, in each embodiment, explanations assumed that the firstconduction type was the P type and the second conduction type was the Ntype, but the first conduction type may be the N type and the secondconduction type may be the P type.

INDUSTRIAL APPLICABILITY

As described above, an integrated circuit and semiconductor device ofthis invention are useful as an integrated circuit and semiconductordevice in which resistors are integrated, and in particular are suitableas an integrated circuit and semiconductor device in which a voltagedivider element is integrated.

1. An integrated circuit, comprising a voltage divider circuit, having:a resistive voltage divider element for dividing a voltage betweenground and a high-voltage line which supplies a voltage obtained byrectifying an alternating-current voltage or a direct-current voltage; aswitch which is connected in series to the resistive voltage dividerelement and which cuts off a current path formed between thehigh-voltage line and ground via the resistive voltage divider element;and switching means for opening and closing the switch according to thestate of a semiconductor device which is a supply destination of thevoltage obtained by division by the resistive voltage divider element,the voltage divider circuit being formed on the same semiconductorsubstrate as the semiconductor device.
 2. The integrated circuitaccording to claim 1, characterized in that the resistive voltagedivider element has a resistance adjustment portion which adjusts avoltage division ratio of the resistive voltage divider element.
 3. Theintegrated circuit according to claim 1, characterized in that theswitch is a MOSFET.
 4. The integrated circuit according to claim 3,characterized in that at least one resistor constituting the resistivevoltage divider element is formed so as to be surrounded by the MOSFET,and one end of the resistor is connected to a drain terminal of theMOSFET.
 5. The integrated circuit according to claim 3, characterized inthat the resistive voltage divider element of the portion in which theresistance adjustment portion is formed is connected to a sourceterminal of the MOSFET.
 6. The integrated circuit according to claim 3,characterized in that a portion or the entirety of the resistive voltagedivider element, the MOSFET, and a JFET are integrated on the samesemiconductor substrate.
 7. The integrated circuit according to claim 6,characterized in that a drain terminal of the JFET and a high-potentialside of the resistive voltage divider element connected to a drainterminal of the MOSFET are connected to an external connection terminalconnected to the high-voltage line.
 8. The integrated circuit accordingto claim 7, characterized in that the drain terminal of the JFET and thehigh-potential side of the resistive voltage divider element connectedto the drain terminal of the MOSFET are connected to the same externalconnection terminal.
 9. The integrated circuit according to claim 6,characterized in that a high-potential side of the resistive voltagedivider element connected to a drain terminal of the JFET and a drainterminal of the MOSFET is connected to an external connection terminalconnected to the high-voltage line.
 10. The integrated circuit accordingto claim 1, characterized in that it is a control IC of a switchingpower supply.
 11. A semiconductor device, comprising: a firstsemiconductor layer of a second conduction type, formed on a surfacelayer of a semiconductor substrate of a first conduction type; a firstinsulating film, covering the first semiconductor layer; a high-voltagehigh-resistance element, buried in the first insulating film; a firstelectrode, electrically connected to the first semiconductor layer andone end of the high-voltage high-resistance element; a secondsemiconductor layer of the second conduction type, formed on the surfacelayer of the semiconductor substrate, removed from the firstsemiconductor layer; a second electrode, electrically connected to thesecond semiconductor layer and the other end of the high-voltagehigh-resistance element; a third diffusion layer of the first conductiontype, formed on the surface layer of the semiconductor substrate incontact with the second semiconductor layer; a fourth diffusion layer ofthe second conduction type, formed on the surface layer of the thirddiffusion layer, removed from the second semiconductor layer; an oxidefilm, formed on a region of the third diffusion layer between the secondsemiconductor layer and the fourth diffusion layer; a third electrode,formed on the oxide film; and a fourth electrode, electrically connectedto the fourth diffusion layer.
 12. The semiconductor device according toclaim 11, further comprising a first oxide film formed on the firstsemiconductor layer, and characterized in that the first insulating filmcovers the first semiconductor layer and the first oxide film, and inthat the high-voltage high-resistance element is buried in the firstinsulating film in the region of the first oxide film of the firstinsulating film.
 13. The semiconductor device according to claim 11,further comprising a second oxide film formed on the secondsemiconductor layer, and a second insulating film covering the secondsemiconductor layer and the second oxide film, and characterized in thatthe third electrode is formed from above the oxide film to above thesecond oxide film.
 14. The semiconductor device according to claim 11,further comprising a first high-voltage application layer of the secondconduction type formed on the surface layer of the semiconductorsubstrate in contact with the first semiconductor layer, and a fifthdiffusion layer of the second conduction type formed on a surface layerof the first high-voltage application layer, removed from the firstsemiconductor layer, and connected to the first electrode.
 15. Thesemiconductor device according to claim 11, further comprising a secondhigh-voltage application layer of the second conduction type formed onthe surface layer of the semiconductor substrate in contact with thesecond semiconductor layer, and a sixth diffusion layer of the secondconduction type formed on a surface layer of the second high-voltageapplication layer, removed from the second semiconductor layer, andconnected to the second electrode.
 16. The semiconductor deviceaccording to claim 11, further comprising a JFET, having: a portion ofthe second semiconductor layer; a portion of the oxide film; a portionof the second high-voltage application layer; a fifth electrodeelectrically connected to the second semiconductor layer; and the secondelectrode electrically connected to the second high-voltage applicationlayer.
 17. The semiconductor device according to claim 11, furthercomprising a third high-voltage application layer of the secondconduction type formed on a surface layer of the third diffusion layer,removed from the second semiconductor layer, and characterized in thatthe fourth diffusion layer is formed on a surface layer of the thirdhigh-voltage application layer, removed from the second semiconductorlayer.
 18. The semiconductor device according to claim 11, characterizedin that the high-voltage high-resistance element is formed such that theplanar shape thereof is a spiral shape.
 19. The semiconductor deviceaccording to claim 11, characterized in that the high-voltagehigh-resistance element is provided in plurality and in parallel. 20.The semiconductor device according to claim 11, characterized in thatthe first semiconductor layer is a first diffusion layer formed withimpurities added, and the second semiconductor layer is a seconddiffusion layer formed with impurities added.
 21. The semiconductordevice according to claim 11, characterized in that the firstsemiconductor layer is a first epitaxial layer formed by epitaxialgrowth, and that the second semiconductor layer is a second epitaxiallayer formed by epitaxial growth.
 22. The semiconductor device accordingto claim 21, characterized in that the first epitaxial layer and thesecond epitaxial layer are separated by a seventh diffusion layer of thefirst conduction type formed on the surface layer of the semiconductorsubstrate.
 23. The semiconductor device according to claim 16,characterized in that the second electrode forming the portion of theJFET and the first electrode are connected to the same terminal by awire.